Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 464-467

  Koh, Alvin Tian Yi ^a   Lee, Rinus Tek Po ^a   Liu, Fang Yue ^a   Liow, Tsung Yang ^a   Tan, Kian Ming ^a   Wang, Xincai ^b   Samudra, Ganesh S ^a   Balasubramanian, N ^c   Chi, Dong Zhi ^d   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Laser anneal; Mobility; Series resistance; Silicon carbon; Strain; Transistors

Indexed keywords

DRAIN CURRENT; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; LASER BEAM EFFECTS; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING;

MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; PULSED LASER ANNEALING; SILICON-CARBON;

FIELD EFFECT TRANSISTORS;

EID: 43549095720     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920275     Document Type: Article

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