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Volumn 140, Issue 1-2, 1999, Pages 12-18

A study on resistance of PECVD silicon nitride thin film to thermal stress-induced cracking

Author keywords

52.75. Rx; 68.60. p; 81.15. Gh; PECVD; Residual stress; Silicon nitride; Thin film; Ultimate strain

Indexed keywords

CRACK INITIATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RESIDUAL STRESSES; SILICON NITRIDE; STRAIN; THERMAL STRESS;

EID: 0033075492     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00366-3     Document Type: Article
Times cited : (19)

References (8)
  • 8
    • 0039722351 scopus 로고
    • PhD Dissertation, Dept. of Chemical Engineering, U. of Arkansas
    • D.H. Yi, PhD Dissertation, Dept. of Chemical Engineering, U. of Arkansas, 1991.
    • (1991)
    • Yi, D.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.