A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

Materials Letters

Volumn 54, Issue 2-3, 2002, Pages 102-107

  Levy, R A ^a   Chen, L ^a   Grow, J M ^a   Yu, Y ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Diethylsilane

Indexed keywords

ELASTIC MODULI; FILM GROWTH; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILANES; STRESS ANALYSIS; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

FLOW RATE RATIO;

SEMICONDUCTING FILMS;

EID: 0036571254     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(01)00545-6     Document Type: Article

References (15)