Process optimization and integration of trimethylsilane-deposited α-SiC:H and α-SiCO:H dielectric thin films for damascene processing

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Gray, W D ^a   Loboda, M J ^a   Bremmer, J N ^a   Struyf, H ^b   Lepage, M ^b   Van Hove, M ^b   Donaton, R A ^b   Sleeckx, E ^b   Stucchi, M ^b   Lanckmans, F ^b   Gao, T ^b   Boullart, W ^b   Coenegrachts, B ^b   Maenhoudt, M ^b   Vanhaelemeersch, S ^b   Meynen, H ^c   Maex, K ^b  

^a DOW CORNING CORPORATION   (United States)

^b IMEC   (Belgium)

^c Dow Corning SA Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DIELECTRIC FILMS; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LITHOGRAPHY; MIXTURES; OPTIMIZATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

DAMASCENE; ORGANOSILICON GAS; TRIMETHYLSILANE;

SILICON CARBIDE;

EID: 18544395563     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1577340     Document Type: Article

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