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Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

Structural, electrical, and mechanical properties development during curing of low-k hydrogen silsesquioxane films

(3) Toivola, Yvete a Thurn, Jeremy a Cook, Robert F a

a UNIVERSITY OF MINNESOTA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CURING; ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; MECHANICAL PROPERTIES; MECHANICAL VARIABLES MEASUREMENT; PERMITTIVITY; PHASE TRANSITIONS; STRUCTURE (COMPOSITION); TEMPERATURE;

CHEMICAL CHANGES; CURVATURE MEASUREMENT TECHNIQUE; DEPTH SENSING INDENTATION; SILSESQUIOXANE; STRUCTURAL CHANGES;

SILICON COMPOUNDS;

EID: 0036503820 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1447225 Document Type: Article

Times cited : (53)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.