Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 943-947

  Tay, L ^a   Lockwood, D J ^a   Baribeau, J M ^a   Wu, X ^a   Sproule, G I ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; VOLUME FRACTION;

EXCITATION WAVELENGTH; GROWTH RATES; RAMAN CROSS SECTION; RAMAN SIGNATURE;

SEMICONDUCTING SILICON;

EID: 3142741037     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1676345     Document Type: Conference Paper

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