Structural and optical properties of stacked self-assembled InAsInGaAs quantum dots on graded Si1-xGex/Si substrate

Applied Physics Letters

Volumn 92, Issue 21, 2008, Pages

  Tanoto, H ^a   Yoon, S F ^a,b   Ngo, C Y ^a   Loke, W K ^a   Dohrman, C ^c   Fitzgerald, E A ^b,c   Narayanan, B ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c Massachusetts Institute of Technology   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NUCLEATION; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

AREAL DENSITY; CROSS-HATCHED LINES; GRADED SUBSTRATES; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 44449096763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2931699     Document Type: Article

References (25)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, West Sussex, 1999).
2. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 73, 2742 (1998).
3. S. Fafard, K. Hinzer, S. Raymond, M. Dion, J. McCaffrey, Y. Feng, and S. Charbonneau, Science 274, 1350 (1996).
4. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
5. C. Y. Liu, S. F. Yoon, Q. Cao, C. Z. Tong, and H. F. Li, Appl. Phys. Lett. 90, 041103 (2007).
6. H. Kroemer, T. Y. Liu, and M. Petroff, J. Cryst. Growth 95, 96 (1989).
7. M. E. Groenert, C. W. Leitz, A. J. Pitera, V. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, J. Appl. Phys. 93, 362 (2003).
8. D. M. Isaacson, C. L. Dohrman, A. J. Pitera, S. Gupta, and E. A. Fitzgerald, in Mid- 105 cm-2 Threading Dislocation Density in Optimized HIgh-Ge Content Relaxed Graded SiGe on Si for III-V Solar on Si, Materials Research Society Symposium Proceedings No. 836 (MRS, Warrendale, PA, 2005), pp. 235-240.
9. H. Tanoto, S. F. Yoon, W. K. Loke, E. A. Fitzgerald, C. Dohrman, B. Narayanan, M. T. Doan, and C. H. Tung, J. Vac. Sci. Technol. B 24, 152 (2006).
10. P. Thilakan, Z. I. Kazi, and T. Egawa, Appl. Surf. Sci. 191, 196 (2002).
11. L. Hansen, A. Ankudinov, F. Bensing, J. Wagner, G. Ade, P. Hinze, V. Wagner, J. Geurts, and A. Waag, Phys. Status Solidi B 224, 515 (2001).
12. Z. Mi, P. Bhattacharya, J. Yang, and K. P. Pipe, Electron. Lett. 41, 742 (2005).
13. R. Mirin, J. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers, Appl. Phys. Lett. 67, 3795 (1995).
14. G. M. Gur'yanov, G. E. Tsyrlin, V. N. Petrov, Yu. B. Samsonenko, V. B. Gubanov, N. K. Polyakov, S. Ya. Tipisev, E. P. Musikhina, and N. N. Ledentsov, Semiconductors 29, 854 (1995).
15. K. Nishi, H. Saito, S. Sugou, and J.-S. Lee, Appl. Phys. Lett. 74, 1111 (1999).
16. N. Nuntawong, J. Tatebayashi, P. S. Wong, and D. L. Huffaker, Appl. Phys. Lett. 90, 163121 (2007).
17. G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Phys. Rev. Lett. 76, 952 (1996).
18. T. Amano, T. Sugaya, and K. Komori, IEEE Photonics Technol. Lett. 18, 619 (2006).
19. H. J. Kim, J. Y. Chang, and Y. H. Xie, J. Cryst. Growth 247, 251 (2003).
20. S. Yu. Shiryaev, F. Jensen, J. L. Hansen, J. W. Petersen, and A. N. Larsen, Phys. Rev. Lett. 78, 503 (1997).
21. C. Y. Ngo, S. F. Yoon, W. J. Fan, and S. J. Chua, Appl. Phys. Lett. 90, 113103 (2007).
22. M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
23. C. Y. Ngo, S. F. Yoon, W. J. Fan, and S. J. Chua, Phys. Rev. B 74, 245331 (2006).
24. K. Sears, J. Wong-Leung, H. H. Tan, and C. Jagadish, J. Appl. Phys. 99, 113503 (2006).
25. A. Polimeni, A. Patań, M. Henini, L. Eaves, and P. C. Main, Phys. Rev. B 59, 5064 (1999).