Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)

Thin Solid Films

Volumn 368, Issue 1, 2000, Pages 93-104

  Tillmann, K ^a   Forster A ^b  

^a UNIVERSITY OF KIEL   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MECHANICS; DISLOCATIONS (CRYSTALS); ELASTICITY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHASE DIAGRAMS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL DIMENSIONS; INTERFACIAL MISFIT DISLOCATION;

SEMICONDUCTING FILMS;

EID: 0342484491     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00858-0     Document Type: Article

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