Silicon photonics

Journal of Lightwave Technology

Volumn 24, Issue 12, 2006, Pages 4600-4615

  Jalali, Bahram ^a   Fathpour, Sasan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS; Continuum generation; Erbium doped silicon; Integrated photonics; Nonlinear optics; Optical amplifier; Optical modulator; Photodetector; Photovoltaic effects; Power dissipation; Raman laser; Raman scattering; Silicon laser; Silicon photonics; Silicon on insulator; Silicon rich oxide; VLSI; Wavelength conversion

Indexed keywords

CMOS INTEGRATED CIRCUITS; LIGHT AMPLIFIERS; LIGHT MODULATORS; OPTICAL FREQUENCY CONVERSION; PHOTONICS; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY; VLSI CIRCUITS;

CONTINUUM GENERATION; INTEGRATED PHOTONICS; OPTICAL DAMAGE THRESHOLD; SILICON PHOTONICS;

SEMICONDUCTING SILICON;

EID: 33847611580     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2006.885782     Document Type: Review

References (135)

1. R. Soref and J. Lorenzo, "All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 μm," IEEE J. Quantum Electron., vol. QE-22, no. 6, pp. 873-879, Jun. 1986.
2. R. A. Soref and B. R. Bennett, "Kramers-Kronig analysis of E-O switching in silicon," in Proc. SPIE Integr. Opt. Circuit Eng., 1986, vol. 704, pp. 32-37.
3. B. Schuppert, J. Schmidtchen, and K. Petermann, "Optical channel waveguides in silicon diffused from GeSi alloy," Electron. Lett., vol. 25, no. 22, pp. 1500-1502, Oct. 1989.
4. 2," IEEE J. Quantum Electron, vol. 27, no. 8, pp. 1971-1974, Aug. 1991.
5. P. D. Trinh, S. Yegnanarayanan, and B. Jalali, "Integrated optical directional couplers in silicon-on-insulator," Electron. Lett., vol. 31, no. 24, pp. 2097-2098, Nov. 1995.
6. U. Fischer, T. Zinke, and K. Petermann, "Integrated optical waveguide switches in SOI," in Proc. IEEE Int. SOI Conf., Oct. 1995, pp. 141-142.
7. T. T. H. Eng, S. S. Y. Sin, S. C. Kan, and G. K. L. Wong, "Surface micromachined movable SOI optical waveguides," in Proc. Int. Conf. Solid-State Sens. Actuators, 1995, vol. 1, pp. 348-350.
8. C. Z. Zhao, G. Z. Li, E. K. Liu, Y. Gao, and X. D. Liu, "Silicon on insulator Mach-Zehnder waveguide interferometers operating at 1.3 μm," Appl. Phys. Lett., vol. 67, no. 17, pp. 2448-2449, Oct. 1995.
9. P. D. Trinh, S. Yegnanarayanan, and B. Jalali, "5 × 9 integrated optical star coupler in silicon-on-insulator technology," IEEE Photon. Technol. Lett., vol. 8, no. 6, pp. 794-796, Jun. 1996.
10. P. D. Trinh, S. Yegnanarayanan, F. Coppinger, and B. Jalah, "Silicon on-insulator (SOI) phased-array wavelength multi-demultiplexer with extremely low-polarization sensitivity," IEEE Photon. Technol. Lett., vol. 9, no. 7, pp. 940-942, Jul. 1997.
11. B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger, "Advances in silicon-on-insulator optoelectronics," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 6, pp. 938-947, Nov./Dec. 1998.
12. B. Jalali, V. Raghunathan, R. Shori, S. Fathpour, D. Dimitropoulos, and O. Stafsudd, "Prospects for silicon mid-IR Raman lasers," IEEE J. Sel. Topics Quantum Electron., submitted for publication.
13. Kotura Inc. products. [Online]. Available: http://www.kotura.com/
14. C. Gunn, "CMOS photonics for high-speed interconnects," IEEE Micro, vol. 26, no. 2, pp. 58-66, Mar./Apr. 2006.
15. D. A. B. Miller, "Optical interconnects to silicon," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1312-1317, Nov./Dec. 2000.
16. D. Pham, S. Asano, M. Bolliger, M. N. Day, H. P. Hofstee, C. Johns, J. Kahle, A. Kameyama, J. Keaty, Y. Masubuchi, M. Riley, D. Shippy, D. Stasiak, M. Suzuoki, M. Wang, J. Warnock, S. Weitzel, D. Wendel, T. Yamazaki, and K. Yazawa, "The design and implementation of a first-generation CELL processor," in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2005, vol. 1, pp. 184-592.
17. K. Chang, S. Pamarti, K. Kaviani, E. Alon, X. Shi, T. J. Chin, J. Shen, G. Yip, C. Madden, R. Schmitt, C. Yuan, F. Assaderaghi, and M. Horowitz, "Clocking and circuit design for a parallel I/O on a first-generation CELL processor," in Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2005, vol. 1, pp. 526-615.
18. N. M. Jokerst, M. A. Brooke, S. Cho, M. Thomas, J. Lillie, D. Kim, S. Ralph, and K. Dennis, "Integrated planar lightwave bio/chem OEIC sensors on Si CMOS circuits," Proc. SPIE, vol. 5730, pp. 226-233, 2005.
19. J. J. Saarinen, J. E. Sipe, S. M. Weiss, and P. M. Fauchet, "Optical sensors based on resonant porous silicon structures," Opt. Express, vol. 13, no. 10, pp. 3754-3764, May 2005.
20. J. Takahashi, T. Tsuchizawa, T. Watanabe, and S. Itabashi, "Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 22, no. 5, pp. 2522-2525, Sep. 2004.
21. Y. Vlasov and S. McNab, "Losses in single-mode silicon-on-insulator strip waveguides and bends," Opt. Express, vol. 12, no. 8, pp. 1622-1631, Apr. 2004.
22. T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, "Microphotonic devices based on silicon microfabrication technology," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 1, pp. 232-240, Jan./ Feb. 2005.
23. K. Yamada, T. Shoji, T. Tsuchizawa, T. Watanabe, J. Takahashi, and S. Itabashi, "Silicon-wire-based ultrasmall lattice filters with wide free spectral ranges," Opt. Lett., vol. 28, no. 18, pp. 1663-1664, Sep. 2003.
24. S. McNab, N. Moll, and Y. Vlasov, "Ultra-low loss photonic integrated circuit with membrane-type photortic crystal waveguides," Opt. Express, vol. 11, no. 22, pp. 2927-2939, Nov. 2003.
25. V. R. Almeida, R. R. Panepucci, and M. Lipson, "Nano-taper for compact mode conversion," Opt. Lett., vol. 28, no. 15, pp. 1302-1304, Aug. 2003.
26. G. Roelkens, P. Dumon, W. Bogaerts, D. Van Thourhout, and R. Baets, "Efficient fiber to SOI photonic wire coupler fabricated using standard CMOS technology," in Proc. 18th Annu. Meeting IEEE LEOS, Oct. 2005, pp. 214-215.
27. D. Taillaert, W. Bogaerts, P. Bienstman, T. F. Krauss, P. Van Daele, I. Moerman, S. Verstuyft, K. De Mesel, and R. Baets, "An out-of-plane grating coupler for efficient butt-coupling between compact planar waveguides and single-mode fibers," IEEE J. Quantum Electron., vol. 38, no. 7, pp. 949-955, Jul. 2002.
28. A. Narasimha, "Low dispersion, high spectral efficiency, RF photonic transmission systems and low loss grating couplers for silicon-on-insulator nanophotonic integrated circuits," Ph.D. dissertation, Univ. California, Los Angeles, 2004.
29. P. Koonath, T. Indukuri, and B. Jalali, "Add-drop filters utilizing vertically-coupled microdisk resonators in silicon," Appl. Phys. Lett., vol. 86, no. 9, pp. 091102(1)-091102(3), Mar. 2005.
30. M. M. Lee and M. C. Wu, "MEMS-actuated microdisk resonators with variable power coupling ratios," IEEE Photon. Technol. Lett., vol. 17, no. 5, pp. 1034-1036, May 2005.
31. M. A. Popovic, T. Barwicz, M. R. Watts, P. T. Rakich, L. Socci, E. P. Ippen, F. X. Kärtner, and H. I. Smith, "Multistage high-order microring-resonator add-drop filters," Opt. Lett., vol. 31, no. 17, pp. 2571-2573, Sep. 2006.
32. R. A. Soref and B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quant. Electronics, vol. QE-23, no. 1, pp. 123-129, Jan. 1987.
33. J. P. Lorenzo and R. A. Soref, "1.3 μm electro-optic silicon switch," Appl. Phys. Lett., vol. 5, no. 1, pp. 6-8, Jul. 1987.
34. L. Friedman, R. A. Soref, and J. P. Lorenzo, "Silicon double-injection electro-optic modulator with junction gate control," J. Appl. Phys., vol. 63, no. 6, pp. 1831-1839, Mar. 1988.
35. S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, "Simulation studies of silicon electro-optic waveguide devices, J. Appl. Phys., vol. 68, no. 10, pp. 4964-4970, Nov. 1990.
36. C. K. Tang, G. T. Reed, A. J. Walton, and A. G. Rickman, "Simulation of a low loss optical modulator for fabrication in SIMOX material," in Proc. Mater. Res. Soc. Symp., 1993, vol. 298, pp. 247-252.
37. C. K. Tang, G. T. Reed, A. J. Walton, and A. G. Rickman, "Low-loss, single-mode, optical phase modulator in SIMOX material," J. Lightw. Technol., vol. 12, no. 8, pp. 1394-1400, Aug. 1994.
38. C. K. Tang and G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides," Electron. Lett., vol. 3 1, no. 6, pp. 451-452, Mar. 1995.
39. G. T. Reed and C. E. Png, "Silicon optical modulators," Mater. Today, vol. 8, no. 1, pp. 40-50, Jan. 2005.
40. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. Keil, and T. Franck, "High speed silicon Mach-Zehnder modulator," Opt. Express, vol. 13, no. 8, pp. 3129-3135, Apr. 2005.
41. EOspcase Inc., 10-20 Gb/s Modulators. [Online]. Available: http://www.eospace.com/12.5+G_modulator.htm
42. C. E. Png, G. T. Reed, W. R. Headley, K. P. Homewood, A. Liub, M. Paniccia, R. M. H. Atta, G. Ensell, A. G. R. Evans, D. Hak, and O. Cohen, "Design and experimental results of small silicon-based optical modulators," Proc. SPIE, vol. 5356, pp. 44-55, 2004.
43. G. Cocorullo, A. Cutolo, F. G. Della Corte, and I. Rendina, "New possibilities for efficient silicon integrated electro-optical modulators," Opt. Commun., vol. 86, no. 2, pp. 228-235, Nov. 1991.
44. V. R. Almeida, C. A. Barrios, R. Panepucci, and M. Lipson, "All-optical control of light on a silicon chip," Nature, vol. 431, no. 7012, pp. 1081-1084, Oct. 2004.
45. Q. Xu, B. Shmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature, vol. 435, no. 7040, pp. 325-327, May 2005.
46. O. Boyraz and B. Jalali, "Demonstration of a directly modulated silicon Raman laser," Opt. Express, vol. 13, no. 3, pp. 796-800, Feb. 2005.
47. D. Wood, Optoelectronic Semiconductor Devices. Trowbridge, U.K.: Prentice-Hall, 1994, p. 250.
48. 1-x/Si strained-layer superlattice detectors operating at 1.3 μm," Appl. Phys. Lett., vol. 49, no. 3, pp. 155-157, Jul. 1986.
49. B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, "SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition," Electron. Lett., vol. 28, no. 3, pp. 269-271, Jan. 1992.
50. B. Jalali, L. Naval, and A. F. J. Levi, "Si-based receivers for optical data links," J. Lightw. Technol., vol. 12, no. 6, pp. 930-935, Jun. 1994.
51. F. Y. Huang, K. Sakamoto, K. L. Wang, P. Trinh, and B. Jalali, "Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range," IEEE Photon. Technol. Lett., vol. 9, no. 2, pp. 229-231, Feb. 1997.
52. L. Colace, G. Masini, and G. Assanto, "Ge-on-Si approach to the detection of near-infrared light," IEEE J. Quantum Electron, vol. 35, no. 12, pp. 1843-1852, Dec. 1999.
53. J. Michel, J. F. Liu, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner, and J. Yasaitis, "High performance Ge p-i-n photodetectors on Si," in Proc. Group IV Photon. Conf., Sep. 2005, pp. 177-179.
54. S. M. Csutak, J. D. Schaub, S. Wang, J. Mogab, and J. C. Campbell, "Integrated silicon optical receiver with avalanche photodiode," Proc. Inst. Electron. Eng.-Optoelectron., vol. 150, no. 3, pp. 235-237, Jun. 2003.
55. G. Dehlinger, J. D. Schaub, S. J. Koester, Q. C. Ouyang, J. O. Chu, and A. Grill, "High-speed germanium-on-insulator photodetectors," in Proc. 18th Annu. Meeting IEEE LEOS, Oct. 2005, pp. 321-322.
56. M. Jutzi, M. Berroth, G. Wold, M. Oehme, and E. Kasper, "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1510-1512, Jul. 2005.
57. C. L. Schow, L. Schares, S. J. Koester, G. Dehlinger, R. John, and F. E. Doany, "A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC," IEEE Photon. Technol. Lett., vol. 18, no. 19, pp. 1981-1983, Oct. 2006.
58. 4+ : YAG laser," Opt. Lett., vol. 27, no. 1, pp. 61-63, Jan. 2002.
59. C. Xu, J. M. Roth, W. H. Knox, and K. Bergman, "Light with single photon counting silicon avalanche photodiode," Electron. Lett., vol. 38, no. 2, pp. 86-88, Jan. 2002.
60. R. Salem, G. E. Tudury, T. U. Horton, G. M. Carter, and T. E. Murphy, "Polarization-insensitive optical clock recovery at 80 Gb/s using a silicon photodiode," IEEE Photon. Technol. Lett., vol. 17, no. 9, pp. 1968-1970, Sep. 2005.
61. Y. Liu, C. W. Chow, W. Y. Cheung, and H. K. Tsang, "In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides," IEEE Photon. Technol. Lett., vol. 18, no. 17, pp. 1882-1884, Sep. 2006.
62. B. Jalali, D. Dimitropoulos, V. Raghunathan, and S. Fathpour, "Silicon lasers," in Silicon Photonics: State of the Art, G. Reed, Ed. Hoboken, NJ: Wiley, 2006.
63. L. Pavesi and G. Guillot, Optical Interconnects: The Silicon Approach. Springer Series in Optical Sciences. New York: Springer-Verlag, 2006.
64. A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, and P. G. Fallica, "Electroluminescence properties of light emitting devices based on silicon nanocrystals," Physica E, vol. 16, no. 3/4, pp. 395-399, Mar. 2003.
65. R. J. Walters, G. I. Bourianoff, and A. Atwater, "Field-effect electroluminescence in silicon nanocrystals," Nat. Mater., vol. 4, no. 2, pp. 143-146, Feb. 2005.
66. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, "Optical gain in silicon nanocrystals," Nature, vol. 408, no. 6811, pp. 440-444, Nov. 2000.
67. J. Ruan, P. M. Fauchet, L. Dal Negro, M. Cazzanelli, and L. Pavesi, "Stimulated emission in nanocrystalline silicon superlattices," Appl. Phys. Lett., vol. 83, no. 26, pp. 5479-5481, Dec. 2003.
68. P. M. Fauchet, "Light emission from Si quantum dots," Materials Today, vol. 8, no. 1, pp. 23-26, Jan. 2005.
69. L. Pavesi, "Routes towards silicon-based lasers," Mater. Today, vol. 8, no. 1, pp. 23-26, Jan. 2005.
70. S. G. Cloutier, P. A. Kossyrev, and J. Xu, "Optical gain and stimulated emission in periodic nanopatterned crystalline silicon," Nat. Mater., vol. 4, no. 12, pp. 887-891, Dec. 2005.
71. M. J. Chen, J. L. Yen, J. Y. Li, J. F. Chang, S. C. Tsai, and C. S. Tsai, "Stimulated emission in a nanostructured silicon pn junction diode using current injection," Appl. Phys. Lett., vol. 84, no. 12, pp. 2163-2165, Mar. 2004.
72. M. E. Castagna, S. Coffa, L. Carestia, A. Messian, and C. Buongiorno, "Quantum dot materials and devices for light emission in silicon," presented at the 32nd Eur. Solid-State Device Research Conf. (ESSDERC), Firenze, Italy, 2002, Paper D21.3.
73. 2," Appl. Phys. Lett., vol. 86, no. 24, p. 241109, Jun. 2005.
74. C. D. Presti, A. Irrera, G. Franzò, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano, A. Piana, and P. G. Fallica, "Light emitting devices based on silicon nanoclusters," in Proc. 2nd IEEE Int. Conf. Group IV Photon., 2005, pp. 45-47.
75. J. Lee, J. H. Shin, and N. Park, "Optical gain at 1.5 μm in nanocrystal Si-sensitized Er-doped silica waveguide using top-pumping 470 nm LEDs," J. Lightw. Technol., vol. 23, no. 1, pp. 19-25, Jan. 2005.
76. A. Polman, B. Min, J. Kalkman, T. J. Kippenberg, and K. J. Vahala, "Ultra-low threshold erbium-implanted toroidal microlaser on silicon," Appl. Phys. Lett., vol. 84, no. 7, pp. 1037-1039, Feb. 2004.
77. M. T. Bulsara, "Optical interconnects promised by III-V on-silicon integration," Solid State Technology, vol. 47, no. 8, p. 22, Aug. 2004.
78. 0.5As quantum dot laser on silicon," Electron. Lett., vol. 41, no. 13, pp. 742-744, Jun. 2005.
79. H. Park, A. W. Fang, S. Kodama, and J. E. Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express, vol. 13, no. 23, pp. 9460-9464, Nov. 2005.
80. Intel Inc., Hybrid silicon laser. [Online]. Available: http://www.intel.com/research/platform/sp/hybridlaser.htm#top
81. R. Claps, D. Dimitropoulos, Y. Han, and B. Jalali, "Observation of Raman emission in silicon waveguides at 1.54 μm," Opt. Express, vol. 10, no. 22, pp. 1305-1313, Nov. 2002.
82. OSA Press Room Editorial. Advancing the science of light. [Online]. Available: http://www.osa.org/news/pressroom/release/ll.2002/jalali.aspx
83. R. Claps, D. Dimitropoulos, V. Raghunathan, Y. Han, and B. Jalali, "Observation of stimulated Raman scattering in silicon waveguides," Opt. Express, vol. 11, no. 15, pp. 1731-1739, Jul. 2003.
84. R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Anti-stokes Raman conversion in silicon waveguides," Opt. Express, vol. 11, no. 22, pp. 2862-2872, Nov. 2003.
85. O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express, vol. 12, no. 21, pp. 5269-5273, Oct. 2004.
86. Nature News Editorial. First silicon laser pulses with life. [Online]. Available: http://www.nature.com/news/2004/041025/full/041025-10.html
87. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Pannicia, "A continuous-wave Raman silicon laser," Nature, vol. 433, no. 7027, pp.725-728, Feb. 2005.
88. J. M. Ralston and R. K. Chang, "Spontaneous-Raman-scattering efficiency and stimulated scattering in silicon," Phys. Rev. B, Condens. Matter, vol. 2, no. 6, pp. 1858-1862, Sep. 1970.
89. P. A. Temple and C. E. Hathaway, "Multiphonon Raman spectrum of silicon," Phys. Rev. B, Condens. Matter, vol. 7, no. 8, pp. 3685-3697, Apr. 1973.
90. D. Dimitropoulos, B. Houshmand, R. Claps, and B. Jalali, "Coupled-mode theory of Raman effect in silicon-on-insulator waveguides," Opt. Lett., vol. 28, no. 20, pp. 1954-1956, Oct. 2003.
91. T. K. Liang and H. K. Tsang, "Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides," Appl. Phys. Lett., vol. 84, no. 15, pp. 2745-2747, Apr. 2004.
92. R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Influence of nonlinear absorption on Raman amplification in silicon waveguides," Opt. Express, vol. 12, no. 12, pp. 2774-2780, Jun. 2004.
93. M. A. Mendicino, "Comparison of properties of available SOI materials," in Properties of Crystalline Silicon, R. Hull, Ed. London, U.K.: Inst. Eng. Technol., 1998, ch. 18.1, pp. 992-1001.
94. J. L. Freeouf and S. T. Liu, "Minority carrier lifetime results for SOI wafers," in Proc. IEEE Int. SOI Conf., Oct. 1995, pp. 74-75.
95. D. Dimitropoulos, R. Jhaveri, R. Claps, J. C. S. Woo, and B. Jalali, "Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides," Appl. Phys. Lett., vol. 86, no. 7, pp. 071115(l)-071115(3), Feb. 2005.
96. R. Espinola, J. Dadap, R. Osgood, S. J. McNab, and Y. A. Vlasov, "Raman amplification in ultrasmall silicon-on-insulator wire waveguides," Opt. Express, vol. 12, no. 16, pp. 3713-3718, Aug. 2004.
97. A. Liu, H. Rong, M. Paniccia, O. Cohen, and D. Hak, "Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering," Opt. Express, vol. 12, no. 18, pp. 4261-4268, Sep. 2004.
98. S. Fathpour, O. Boyraz, D. Dimitropoulos, and B. Jalali, "Demonstration of CW Raman gain with zero electrical power dissipation in p-i-n silicon waveguides," presented at the IEEE Conf. Lasers and Electro-Optics (CLEO), Long Beach, CA, 2006, Paper CMK3.
99. D. Dimitropoulos, S. Fathpour, and B. Jalali, "Intensity dependence of the carrier lifetime in silicon Raman lasers and amplifiers," Appl. Phys. Lett., vol. 87, no. 26, pp. 261108(l)-261108(3), Dec. 2005.
100. M. Krauss, H. Renner, E. Brinkmeyer, S. Fathpour, D. Dimitropoulos, V. Raghunathan, and B. Jalali, "Efficient Raman amplification in cladding-pumped silicon waveguides," in Proc. Group IV Photonics Conf., Ottawa, ON, Canada, Sep. 13-15, 2006, pp. 61-63.
101. F. J. Grawert, J. T. Gopinath, F. Ö. Ilday, H. M. Shen, E. P. Ippen, F. X. Kärtner, S. Akiyama, J. Liu, K. Wada, and L. C. Kimerling, "220-fs erbium-ytterbium: Glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber," Opt. Lett., vol. 30, no.3, p.329, Feb. 2005.
102. R. Claps, V. Raghunathan, D. Dimitropoulos, and B. Jalali, "Anti-Stokes Raman conversion in silicon waveguides," Opt. Express, vol. 11, no. 22, pp. 2862-2872, Nov. 2003.
103. V. Raghunathan, R. Claps, D. Dimitropoulos, and B. Jalali, "Wavelength conversion in silicon using Raman induced four-wave mixing," Appl. Phys. Lett., vol. 85, no. 1, pp. 34-36, Jul. 2004.
104. V. Raghunathan, R. Claps, D. Dimitropoulos, and B. Jalali, "Parametric Raman wavelength conversion in scaled silicon wave-guides," J. Lightw. Technol., vol. 23, no. 6, pp. 2094-2102, Jun. 2005.
105. H. Fukuda, K. Yamada, T. Shoji, M. Takahashi, T. Tsuchizawa, T. Watanabe, J. Takahashi, and S. Itabashi, "Four-wave mixing in silicon wire waveguides," Opt. Express, vol. 13, no. 12, pp. 4629-4637, Jun. 2005.
106. R. Espinola, J. Dadap, R. Osgood, Jr., S. McNab, and Y. Vlasov, "C-band wavelength conversion in silicon photonic wire waveguides," Opt. Express, vol. 13, no. 11, pp. 4341-4349, May 2005.
107. M. A. Foster, A. C. Turner, J. E. Sharping, B. S. Schmidt, M. Lipson, and A. L. Gaeta, "Broad-band optical parametric gain on a silicon photonic chip," Nature, vol. 441, no. 7096, pp. 960-963, Jun. 2006.
108. L. R. Nunes, T. K. Liang, H. K. Tsang, M. Tsuchiya, D. Van Thourhout, P. Dumon, and R. Baets, "Ultrafast non-inverting wave-length conversion by cross-absorption modulation in silicon wire wave-guides," in Proc. 2nd IEEE Int. Conf. Group IV Photon., Sep. 2005, pp. 154-156.
109. V. Raghunathan and B. Jalali, "Stress-induced phase matching in silicon waveguides," presented at the Conf. Lasers and Electro-Optics (CLEO), Long Beach, CA, May 2006, Paper CMK5.
110. O. Boyraz, T. Indukuri, and B. Jalali, "Self-phase modulation-induced spectral broadening in silicon waveguides," Opt. Express, vol. 12, no. 5, pp. 829-834, Mar. 2004.
111. O. Boyraz, P. Koonath, V. Raghunathan, and B. Jalali, "All optical switching and continuum generation in silicon waveguides," Opt. Express, vol. 12, no. 17, pp. 4094-4102, Aug. 2004.
112. O. Boyraz, J. Kim, M. N. Islam, F. Coppinger, and B. Jalali, "10 Gb/s multiple wavelength, coherent short pulse source based on spectral carving of supercontinuum generated in fibers," J. Lightw. Technol., vol. 18, no. 12, pp. 2167-2175, Dec. 2000.
113. E. Dulkeith, Y. Vlasov, F. Xia, X. Chen, N. Panoiu, and R. Osgood, "Efficient self-phase-modulation in submicron silicon-on-insulator wave-guides," in Proc. CLEO, Long Beach, CA, May 2006, Paper QTuC7.
114. T. Indukuri, P. Koonath, and B. Jalali, "Monolithic vertical integration of metal-oxide-semiconductor transistor with subterranean photonics in silicon," in Proc. OFC, Anaheim, CA, Mar. 2006.
115. J. Halloy, "Research highlights: Photonics: Silicon goes underground," Nature, vol. 440, no. 7085, p. 718, Apr. 2006.
116. Courtesy of E. Pop, Stanford Univ., Stanford, CA, personal communication.
117. D. J. Frank, "Power-constrained CMOS scaling limits," IBM J. Res. Develop., vol. 46, no. 2/3, pp. 235-244, Mar.-May 2002.
118. International Technology Roadmap for Semiconductors. [Online]. Available: http://www.itrs.net/
119. O. Qasaimeh, P. Bhattacharya, and E. T. Croke, "SiGe-Si quantum-well electroabsorption modulators," IEEE Photon. Technol. Lett., vol. 10, no. 6, pp. 807-809, Jun. 1998.
120. Y. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, "Strong quantum-confined Stark effect in ger- manium quantum-well structures on silicon," Nature, vol. 437, no. 7063, pp. 1334-1336, Oct. 2005.
121. S. Fathpour, K. K. Tsia, and B. Jalali, "Energy harvesting in silicon Raman amplifiers," Appl. Phys. Lett., vol. 89, no. 6, p. 061109, Aug. 2006.
122. S. Fathpour, K. K. Tsia, and B. Jalali, "Photovoltaic effect in silicon Raman amplifiers," presented at the Optical Amplifiers and Their Applications (OAA), Whistler, BC, Canada, 2006, Paper PD1.
123. Y. Liu and H. K. Tsang, "Raman gain in helium ion implanted silicon waveguides," in Proc. CLEO, Long Beach, CA, May 2006, Paper CTuU6.
124. V. Raghunathan, R. Shori, O. Stafsudd, and B. Jalali, "Nonlinear absorption in silicon and the prospects of mid-infrared silicon Raman lasers," J. Phys. Status Solidi, A, vol. 203, no. 5, pp. R38-R40, Mar. 2006.
125. M. C. M. Lee and M. C. Wu, "Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction," J. Microelectromech. Syst., vol. 15, no. 2, pp. 338-343, Apr. 2006.
126. M. Borselli, T. J. Johnson, and O. Painter, "Beyond the Rayleigh scattering limit in high-Q silicon microdisks: Theory and experiment," Opt. Express, vol. 13, no. 5, pp. 1515-1530, Mar. 2005.
127. D. Leong, M. Harry, K. J. Reeson, and K. P. Homewood, "A silicon/ iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm," Nature, vol. 387, no. 6634, pp. 686-688, Jun. 1997.
128. W. L. Ng, M. A. Lourenço, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, "An efficient room-temperature silicon-based light-emitting diode," Nature, vol. 410, no. 6825, pp. 192-194, Mar. 2001.
129. M. A. Green, J. Zhao, A. Wang, P. J. Reece, and M. Gal, "Efficient silicon light-emitting diodes," Nature, vol. 412, no. 6849, pp. 805-808, Aug. 2001.
130. S. Noda and T. Asano, "SOI-based phothonic crystals," in Proc. Group IV Photon. Conf., Sep. 2005, pp. 27-29.
131. S. Y Lin, V. M. Hietala, L. Wang, and E. D. Jones, "Highly dispersive photonic band-gap prism," Opt. Lett., vol. 21, no. 21, pp. 1771-1773, Nov. 1996.
132. H. Hosaka, T. Kawashima, A. Tomita, M. Notomi, T. Tamamura, T. Sato, and S. Kawakami, "Superprism phenomena in photortic crystals," Phys. Rev. B, Condens. Matter, vol. 58, no. 16, pp. R10096-R10099, Oct. 1998.
133. P. T. Rakich, M. S. Dahlem, S. Tandon, M. Ibanescu, M. Soljaci, G. S. Petrich, J. D. Joannopoplus, L. A. Kolodziejski, E. P. Ippen, "Achieving centimetre-scale supercollimation in a large-area two-dimensional photonic crystal," Nat. Mater., vol. 5, no. 2, pp. 93-96, Feb.2006
134. M. Loncar, D. Nedeljkovic, T. Doll, J. Vuckovic, A. Scherer, and T. P. Pearsall, "Waveguiding in planar photonic crystals," Appl. Phys. Lett., vol. 77, no. 13, pp. 1937-1939, Sep. 2000.
135. M. So1jacic, S. G. Johnson, S. Fan, M. Ibanescu, E. Ippen, and J. D. Joannopoulos, "Photonic-crystal slow-light enhancement of non-linear phase sensitivity," J. Opt. Soc. Amer. B, Opt. Phys., vol. 19, no. 9, pp. 2052-2059, Sep. 2002.