Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2958-2960

  Chang, W H ^a   Chou, A T ^a   Chen, W Y ^a   Chang, H S ^a   Hsu, T M ^a   Pei, Z ^b   Chen, P S ^b   Lee, S W ^b   Lai, L S ^b   Lu, S C ^b   Tsai, M J ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GERMANIUM; LIGHT EMITTING DIODES; PASSIVATION; QUANTUM EFFICIENCY; SELF ASSEMBLY; SILICON; THERMAL EFFECTS;

RECOMBINATION CENTERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10744228807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616665     Document Type: Article

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