Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon

IEEE Photonics Technology Letters

Volumn 19, Issue 10, 2007, Pages 747-749

  Yang, Jun ^a   Bhattacharya, Pallab ^a   Wu, Zhuang ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Focused ion beam (FIB) etching; Integrated laser modulator on silicon; Quantum confined Stark effect (QCSE)

Indexed keywords

ELECTROABSORPTION MODULATORS; SILICON; COMMINUTION; CRYSTAL GROWTH; ETCHING; GALLIUM ALLOYS; GALLIUM ARSENIDE; ION BEAMS; IONS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STARK EFFECT;

ELECTRO-ABSORPTION; FOCUSED-ION-BEAM (FIB) ETCHING; INTEGRATED LASER/MODULATOR ON SILICON; MONOLITHIC INTEGRATIONS; QUANTUM DOT LASERS; QUANTUM WELLS; QUANTUM-CONFINED STARK EFFECT (QCSE);

MONOLITHIC INTEGRATED CIRCUITS; QUANTUM DOT LASERS;

COUPLING COEFFICIENT; DEPTH OF MODULATION; FOCUSED ION BEAM ETCHING; GAAS; INTEGRATED LASER/MODULATOR ON SILICON; MONOLITHIC INTEGRATION; QUANTUM WELL; QUANTUM-CONFINED STARK EFFECT; REVERSE BIAS;

EID: 40849132043     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.895429     Document Type: Article

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