Thermally processed high-mobility MOS thin-film transistors on transferable single-crystal elastically strain-sharing Si/SiGe/Si nanomembranes

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 810-815

  Yuan, Hao Chih ^a,b   Kelly, Michelle M ^a,c   Savage, Donald E ^a   Lagally, Max G ^a   Celler, George K ^d   Ma, Zhenqiang ^a  

^a University of Wisconsin Madison   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c SAINT MARY'S COLLEGE   (United States)

^d Soitec USA   (United States)

Author keywords

Heterogeneous integration; Mobility; MOS; Nanomembrane; Silicon; Silicon germanium (SiGe); Silicon on insulator (SOI); Strain sharing; Thin film transistor (TFT)

Indexed keywords

ELECTRON MOBILITY; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS; THERMODYNAMIC STABILITY;

HETEROGENEOUS INTEGRATION; NANOMEMBRANE; SILICON GERMANIUM;

THIN FILM TRANSISTORS;

EID: 40949094482     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.914833     Document Type: Article

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