Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1639-1642

  Faqir, M ^a   Verzellesi, G ^a   Fantini, F ^a   Danesin, F ^b   Rampazzo, F ^b   Meneghesso, G ^b   Zanoni, E ^b   Cavallini, A ^c   Castaldini, A ^c   Labat, N ^d   Touboul, A ^d   Dua, C ^e  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d UNIVERSITÉ BORDEAUX 1   (France)

^e NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHARGE TRANSFER; CIRCUIT SIMULATION; GALLIUM NITRIDE; RELIABILITY ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

BIAS CONDITIONS; BUFFER TRAPS; NUMERICAL DEVICE SIMULATIONS; SURFACE TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548687469     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.005     Document Type: Article

References (7)

1. Meneghesso G., et al. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs. IEEE Trans Electron Dev ED-53 (2006) 2932-2941
2. Joh J, del Alamo J. Mechanisms for electrical degradation of GaN high-electron mobility transistors. IEDM Tech. Digest; 2006.
3. Sozza A, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 h on-state and off-state hot-electron stress. IEDM Tech. Digest; 2005.
4. Blight S.R., Wallis R.H., and Thomas H. Surface influence on the conductance DLTS spectra of GaAs MESFET's. IEEE Trans Electron Dev ED-33 (1986) 1447-1453
5. Vetury R., et al. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFET's. IEEE Trans Electron Dev ED-48 (2001) 560-566
6. Kruppa W., and Boos J.B. Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMT's with single- and double-recessed gate structures. IEEE Trans Electron Dev ED-44 (1997) 687-692
7. Ibbetson J.P., Fini P.T., Ness K.D., DenBaars S.P., Speck J.S., and Mishra U.K. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl Phys Lett 77 (2000) 250-252