Analysis of leakage current mechanisms in Schottky contacts to GaN and Al 0.25Ga 0.75N/GaN grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Zhang, H ^a   Miller, E J ^a   Yu, E T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE DISLOCATION STATES; METAL-SEMICONDUCTOR INTERFACES; ROOM TEMPERATURE; SCHOTTKY CONTACTS;

ALUMINUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

LEAKAGE CURRENTS;

EID: 31644446727     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159547     Document Type: Article

References (22)

1. S. Rajan, P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, IEEE Electron Device Lett. 25, 247 (2004).
2. J. W. P. Hsu, M. J. Manfra, R. J. Molnar, B. Heying, and J. S. Speck, Appl. Phys. Lett. 81, 79 (2002).
3. J. W. P. Hsu, Appl. Phys. Lett. 78, 1685 (2001).
4. J. E. Northrup, Appl. Phys. Lett. 78, 2288 (2001).
5. E. J. Miller, D. M. Schaadt, E. T. Yu, C. Poblenz, C. Elsass, and J. S. Speck, J. Appl. Phys. 91, 9821 (2002).
6. E. J. Miller, D. M. Schaadt, E. T. Yu, P. Waltereit, C. Poblenz, and J. S. Speck, Appl. Phys. Lett. 82, 1293 (2003).
7. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, Appl. Phys. Lett. 84, 535 (2004).
8. B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, Appl. Phys. Lett. 77, 2885 (2000).
9. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
10. Z. Weinberg, J. Appl. Phys. 53, 5052 (1982).
11. O. Ambacher, J. Phys.: Condens. Matter 14, 3399 (2002).
12. A. M. Witowski, K. Pakula, J. M. Baranowski, M. L. Sadowski, and P. Wyder, Appl. Phys. Lett. 75, 4154 (1999).
13. Y. N. Xu and W. Y. Ching, Phys. Rev. B 48, 4335 (1993).
14. E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, J. Appl. Phys. 94, 7611 (2003).
15. C. Chaneliere, J. L. Autran, S. Four, R. A. B. Devine, and B. Balland, J. Non-Cryst. Solids 245, 73 (1999).
16. J. R. Yeargan and H. L. Taylor, J. Appl. Phys. 39, 5600 (1968).
17. J. G. Simmons, Phys. Rev. 155, 657 (1967).
18. A. S. Barker Jr. and M. Ilegems, Phys. Rev. B 7, 743 (1973).
19. V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
20. J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).
21. C. T. Foxon, S. V. Novikov, L. X. Zhao, and I. Harrison, Appl. Phys. Lett. 83, 1166 (2003).
22. D. R. Hang, C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, Appl. Phys. Lett. 90, 1887 (2001).