An internally-matched GaN HEMT amplifier with 550-watt peak power at 3.5 GHz

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Wu, Y F ^a   Wood, S M ^b   Smith, R P ^b   Sheppard, S ^b   Allen, S T ^b   Parikh, P ^a   Milligan, J ^b  

^a Cree Santa Barbara Technology Center   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASSOCIATED GAIN; DRAIN EFFICIENCY; GAN HEMTS; GAN-HEMT; HIGH POWERS; INTERNALLY-MATCHED; PEAK POWERS;

ELECTRON DEVICES; GALLIUM NITRIDE; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 46049099838     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346800     Document Type: Conference Paper

References (4)

1. Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by Field Plate Optimization", IEEE Electron Device Letters, Vol. 25, No. 3, pp. 117-119, March 2004.
2. Y.-F. Wu, M. Moore, T. Wisleder, A. Saxler, and P. Parikh, "40-W/mm Double Field-Plated GaN HEMTs", IEEE Device Research Conference, June 2006.
3. A. Wakejima, K. Matsunaga, Y. Okamoto, K. Ota, Y. Ando, T. Nakayama, and H. Miyamoto, "370-W Output Power GaN-FET Amplifier with Low Distortion for W-CDMA Base Stations", pp. 1360-1365, International Microwave Symposium Digest, 2006 IEEE MTTS, San Francisco, June 13-16, 2006.
4. A. Maekawa, T. Yamamoto, E. Mitani and S. Sano, "A 500W Push-Pall AlGaN/GaN HEMT Amplifier for L-band High Power Application", pp.722-725, International Microwave Symposium Digest, 2006 IEEE MTTS, San Francisco, June 13-16, 2006.