On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 87-89

  Karmalkar, Shreepad ^a   Satyan, Naresh ^a   Sathaiya, D Mahaveer ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

DIRECT TUNNELING (DT); GATE LEAKAGE MECHANISM; REVERSE GATE LEAKAGE; TRAP-ASSISTED TUNNELING (TT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31544457357     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.862672     Document Type: Article

References (10)

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