A review of failure modes and mechanisms of GaN-based HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 381-384

  Zanoni, Enrico ^a   Meneghesso, Gaudenzio ^a   Verzellesi, Giovanni ^b   Danesin, Francesca ^a   Meneghini, Matteo ^a   Rampazzo, Fabiana ^a   Tazzoli, Augusto ^a   Zanon, Franco ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; MECHANISMS; QUALITY ASSURANCE; RELIABILITY; SEMICONDUCTING GALLIUM;

ACCELERATED TESTING; ALGAN/GAN; BIAS CONDITIONS;

FAILURE ANALYSIS;

EID: 50249124851     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418952     Document Type: Conference Paper

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