AlGaN/GaN High Electron Mobility Transistors

Nitride Semiconductor Devices: Principles and Simulation

Volumn , Issue , 2007, Pages 211-233

  Palacios, Tomás ^a   Mishra, Umesh K ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b University of California   (United States)

Author keywords

AlGaN GaN high electron mobility transistors; Material properties; Nitride semiconductor devices; Physics based simulations

Indexed keywords

EID: 46649085815     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527610723.ch10     Document Type: Chapter

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