Drain current DLTS of AlGaN-GaN MIS-HEMTs

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 523-525

  Okino, T ^a   Ochiai, M ^a   Ohno, Y ^a   Kishimoto, S ^a   Maezawa, K ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON TRAPS; EPITAXIAL GROWTH; GALLIUM NITRIDE; GATES (TRANSISTOR); HOLE TRAPS; LEAKAGE CURRENTS; MIS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

DRAIN CURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON POPULATION; GATE INSULATOR; HOLE TRAP LIKE POSITIVE PEAKS; HOLE TRAP POPULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3943067088     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.832788     Document Type: Article

References (12)

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