Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 174-179

  Cristiano, F ^a,d   Cherkashin, N ^b,d   Calvo, P ^b,d   Lamrani, Y ^a,d   Hebras, X ^a,d   Claverie, A ^b,d   Lerch, W ^c   Paul, S ^c  

^a LAAS CNRS   (France)

^b CEMES CNRS   (France)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d CNRS   (France)

Author keywords

Dopant activation; Extended defects; Solid phase epitaxy; Ultra shallow junctions

Indexed keywords

ANNEALING; BORON; DIFFUSION; DISSOLUTION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT ACTIVATION; EXTENDED DEFECTS; SOLID PHASE EPITAXY (SPE); ULTRA-SHALLOW JUNCTIONS (USJ);

SEMICONDUCTOR JUNCTIONS;

EID: 10644245922     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.049     Document Type: Conference Paper

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