Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 462-467

  Murrell, A J ^a   Collart, E J H ^a   Foad, M A ^a   Jennings, D ^b  

^a Applied Materials   (United Kingdom)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; OPTIMIZATION; OXIDATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

LOW-ENERGY ION IMPLANTATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033701292     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591212     Document Type: Article

References (9)

1. A. J. Murrell, E. J. H. Collart, M. A. Foad, G. De Cock, D. Wager, and Y. Matsunaga, Proc. Ion Implant. Tech. 1998 (to be published).
2. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors (SIA, San Jose, 1997).
3. D. F. Downey, J. W. Chow, W. Lerch, J. Niess, and S. D. Marcus, Mater. Res. Soc. Symp. Proc. 525, 263 (1998).
4. A. J. Murrell, M. Foad, G. De Cock, and E. Collart, Proc. Ion Implant. Tech. 1998 (to be published).
5. A. Stolk, H. J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
6. D. Alquier, N. E. B. Cowern, P. Pichler, C. Armand, A. Martinez, D. Mathiot, M. Omri, and A. Claverie, Mater. Res. Soc. Symp. Proc. 525, 67 (1998).
7. L. Pelaz, M. Jaraiz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, D. J. Eaglesham, and J.M. Poate, Appl. Phys. Lett. 70, 2285 (1997).
8. S. Moffatt, A. J. Murrell, G. De Cock, D. Armour, M. Foad, and E. Collart, Proc. Ion Implant. Tech. 1998 (to be published).
9. Y. Matsunaga, A. J. Murrell, M. A. Foad, B. Adibi, and H. Asechi, Proc. Ion Implant. Tech. 1998 (to be published).