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Volumn 47, Issue 11, 2008, Pages 8328-8332

Effects of polymer interference during acid generation on latent image quality of extreme ultraviolet resists

Author keywords

Chemically amplified resist; Dissociative electron attachment; EUV lithography; Line edge roughness; Sensitivity

Indexed keywords

ACIDS; ATOMS; DISSOCIATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON ENERGY ANALYZERS; ELECTRONS; FLUORINE; HALOGENATION; IMAGE QUALITY; LASER PULSES; PHOTODISSOCIATION; PHOTORESISTORS; POLYMERS; RADIATION EFFECTS; ROUGHNESS MEASUREMENT; SUGAR (SUCROSE); ULTRAVIOLET DEVICES;

EID: 58749096376     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8328     Document Type: Article
Times cited : (20)

References (45)
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    • (1993) Advances in Chemistry Series , vol.236 , pp. 557
    • Hacker, N.P.1    Welsh, K.M.2
  • 27
    • 58749112476 scopus 로고    scopus 로고
    • A. B. Ross: NSRDS-NBS (U.S. Department of Commerce, Washington, D.C., 1975) Suppl. 43.
    • A. B. Ross: NSRDS-NBS (U.S. Department of Commerce, Washington, D.C., 1975) Suppl. 43.
  • 34
    • 0028387002 scopus 로고    scopus 로고
    • S. Tanuma, C. J. Powell, and D. R. Penn: Surf. Interface Anal. 21 (1.994) 165.
    • S. Tanuma, C. J. Powell, and D. R. Penn: Surf. Interface Anal. 21 (1.994) 165.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.