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Volumn 21, Issue 3, 2008, Pages 415-420

Design of faster high resolution resists: Getting more acid yield from EUV photons

Author keywords

Acid diffusion; EUV lithography; Outgassing; Photospeed; Resolution

Indexed keywords


EID: 50149104365     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.21.415     Document Type: Article
Times cited : (10)

References (14)
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  • 4
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  • 9
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    • J. W. Thackeray, R. A. Nassar, R. Brainard, D. Goldfarb, T. Wallow, Y. Wei, J. Mackey, P. Naulleau, B. Pierson, H. Solak, Chemically Amplified Resists Resolving 25nm 1:1 Line:Space features with EUV Lithography, Proc. SPIE, 651719, pp. 1-12 (2007);
    • (a) J. W. Thackeray, R. A. Nassar, R. Brainard, D. Goldfarb, T. Wallow, Y. Wei, J. Mackey, P. Naulleau, B. Pierson, H. Solak, "Chemically Amplified Resists Resolving 25nm 1:1 Line:Space features with EUV Lithography, " Proc. SPIE, 651719, pp. 1-12 (2007);
  • 11
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    • Lithographic importance of acid diffusion in chemically amplified resists
    • (a) D. van Steenwinckel, J. H. Lammers, L. H. Leunissen, J. A. J. M. Kwinten, "Lithographic importance of acid diffusion in chemically amplified resists," Proc SPIE, 5753, pp. 269-280 (2005);
    • (2005) Proc SPIE , vol.5753 , pp. 269-280
    • van Steenwinckel, D.1    Lammers, J.H.2    Leunissen, L.H.3    Kwinten, J.A.J.M.4
  • 12
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    • Mark D. Smith, Jeffrey D. Byers, C. A. Mack, The lithographic impact of resist model parameters, Proc. SPIE, 5376, pp. 322-332 (2004).
    • (b) Mark D. Smith, Jeffrey D. Byers, C. A. Mack, "The lithographic impact of resist model parameters," Proc. SPIE, 5376, pp. 322-332 (2004).
  • 13
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    • T. Kozawa, A. Saeki, S. Tagawa, Modeling and simulation of chemically amplified electron beam, x-ray and EUVresist processes, J. Vac. Sci. Technol. B 22(6), pp 3489-3492 (Nov/Dec 2004).
    • T. Kozawa, A. Saeki, S. Tagawa, "Modeling and simulation of chemically amplified electron beam, x-ray and EUVresist processes," J. Vac. Sci. Technol. B 22(6), pp 3489-3492 (Nov/Dec 2004).
  • 14
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    • Dependence of acid generation efficiency on the protection ratio in chemically amplified electron beam, x-ray and EUV resists
    • Nov/Dec
    • H. Yamamoto, T. Kozawa, A. Nakano, K. Okamoto, S. Tagawa, T. Ando, M.Sato, H. Komano, " Dependence of acid generation efficiency on the protection ratio in chemically amplified electron beam, x-ray and EUV resists," J. Vac. Sci. Technol. B 22(6), pp. 3522-3524 (Nov/Dec 2004).
    • (2004) J. Vac. Sci. Technol. B , vol.22 , Issue.6 , pp. 3522-3524
    • Yamamoto, H.1    Kozawa, T.2    Nakano, A.3    Okamoto, K.4    Tagawa, S.5    Ando, T.6    Sato, M.7    Komano, H.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.