|
|
Volumn 47, Issue 9 PART 1, 2008, Pages 7125-7127
|
|
Difference between acid generation mechanisms in poly(hydroxystyrene)-and polyacrylate-based chemically amplified resists upon exposure to extreme ultraviolet radiation
|
|
Author keywords
Chemically amplified resist; Deprotonation; EUV lithography; PHS; PMMA
|
|
Indexed keywords
ABS RESINS;
ACIDS;
CONCENTRATION (PROCESS);
DEPROTONATION;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON BEAMS;
ESTERS;
KRYPTON;
LASER PULSES;
PHOTORESISTORS;
PHOTORESISTS;
POLYACRYLATES;
POLYMERS;
ULTRAVIOLET RADIATION;
ACID GENERATIONS;
ACID GENERATORS;
ARF LITHOGRAPHIES;
AS MODELS;
CHEMICALLY AMPLIFIED RESIST;
CHEMICALLY AMPLIFIED RESISTS;
DEPROTONATION MECHANISMS;
EUV LITHOGRAPHY;
EUV RADIATIONS;
EXTREME ULTRAVIOLET RADIATIONS;
EXTREME ULTRAVIOLETS;
HYDROXYSTYRENE;
KRF LITHOGRAPHIES;
MASS PRODUCTIONS;
METHYL METHACRYLATES;
PMMA;
POLIES (METHYL METHACRYLATE);
POLYMER RADICALS;
SEMI-CONDUCTORS;
EXTREME ULTRA VIOLETS;
POLIES (METHYLMETHACRYLATE);
POLY (4 HYDROXYSTYRENE) (PHS);
POLY(HYDROXYSTYRENE);
ULTRAVIOLET DEVICES;
|
|
EID: 55149110775
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.7125 Document Type: Article |
|
Times cited : (23)
|
|
References (25)
|
