The path to stoichiometric composition of III-V binary quantum dots through plasma/ion-assisted self-assembly

Surface Science

Volumn 603, Issue 2, 2009, Pages 359-368

  Rider, A E ^a,b   Ostrikov, K ^a,b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b CSIRO   (Australia)

Author keywords

Computer simulation; III V Semiconductors; Plasma; Quantum dots; Self assembly; Stoichiometry; Surface diffusion

Indexed keywords

ARCTIC ENGINEERING; BACKPROPAGATION; COMPUTER SIMULATION; CRYSTALS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GASES; GROWTH (MATERIALS); ION SOURCES; IONIZATION OF GASES; MATHEMATICAL MODELS; MICROELECTRONICS; OPTICAL WAVEGUIDES; PLASMAS; QUANTUM ELECTRONICS; SELF ASSEMBLY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SURFACE DIFFUSION;

BINARY QUANTUM DOTS; DEVICE PERFORMANCES; ELEMENTAL COMPOSITIONS; III-V SEMICONDUCTORS; INITIAL STAGES; IONIZED GASSES; ISLAND SIZE DISTRIBUTIONS; MICROELECTRONICS INDUSTRIES; NEUTRAL GASSES; NUMERICAL SIMULATIONS; PROCESS CONDITIONS; QUANTUM DOTS; SILICON TECHNOLOGIES; STOICHIOMETRIC COMPOSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58249115245     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.11.030     Document Type: Article

References (80)

1. Bailey R.E., and Nie S. J. Am. Chem. Soc. 125 (2003) 7100
2. Reboredo F.A., Pizzagalli L., and Galli G. Nano. Lett. 4 (2004) 801
3. P. Rudolph, Present state and future tasks of III-V bulk crystal growth, in: IEEE 19th International Conference on Indium Phosphide and Related Materials, IPRM '07, 14-18, May 2007, Matsue, Japan, pp. 333-338.
4. Nishizawa J.-I., and Oyama Y. Mater. Sci. Eng. R R 12 (1994) 273-426
5. Zhou J.F., Chen Z., He L.B., Xu C.H., Yang L., Han M., and Wang G.H. Eur. Phys. J. D 43 1-3 (2007) 283-286
6. Tasco V., Deguffroy N., Baranov A.N., Tournié E., Satpati B., and Trampert A. Phys. Status Solidi B 243 (2006) 3959
7. Orr J.M.S., Buckle P.D., Fearn M., Storey C.J., Buckle L., and Ashley T. New J. Phys. 9 (2007) 261
8. Nakajima F., Motohisa J., and Fukui T. Appl. Surf. Sci. 162 (2000) 650-654
9. Shusterman S., Paltiel Y., Sher A., Ezersky V., and Rosenwaks Y. J. Cryst. Growth 291 2 (2006) 363-369
10. Fukui T., Ando S., and Honda T. Surf. Sci. 267 (1992) 236
11. Deguffroy N., Tasco V., Baranov A.N., Tournie E., Satpati B., Trampert A., Dunaevskii M.S., Titkov A., and Ramonda M. J. Appl. Phys. 101 12 (2007) 124309
12. Lee C., Park C., Lee H., Lee K., Park S., Park C., Noh S., and Koguchi N. Jpn. J. Appl. Phys. Part 1 37 12B (1998) 7158-7160
13. Sablon K.A., Lee J.H., Wang Z.M., Shultz J.H., and Salamo G.J. Appl. Phys. Lett. 92 20 (2008) 203106
14. Besson D., Treilleux M., Hoareau A., and Esnouf C. Mater. Sci. Eng. B 90 3 (2002) 213-223
15. Moiseev K.D., Parkhomenko Y.A., Ankudinov A.V., Gushchina E.V., Mikhailova M.P., Titkov A.N., and Yakovlev Y.P. Technol. Phys. Lett. 33 4 (2007) 295-298
16. Bae C., and Lucovsky G. Surf. Sci. 532 (2003) 759-763
17. Yasui K., Kikuchi K., Uwabachi A., and Akahane T. Appl. Surf. Sci. 142 (1999) 386
18. Shen X.Q., Furuta K., Nakamura N., Matsuhata H., Shimizu M., and Okumura H. J. Cryst. Growth 301-302 (2007) 404-409
19. Ostrikov K. Rev. Mod. Phys. 77 (2005) 489
20. Ostrikov K., and Murphy A.B. J. Phys. D.: Appl. Phys. 40 (2007) 2223
21. Cvelbar U., Mozetič M., Junkar I., Vesel A., Kovač J., Drenik A., Vrlinič T., Klanjšek-Gunde N., Markoli B., Krstulovič N., Milošević S., Gaboriau F., and Belmonte T. Appl. Surf. Sci. 253 (2007) 8669
22. Ostrikov K. Vacuum 83 (2008) 4-10
23. Nozaki T., Sasaski K., Ogino T., Asahi D., and Okazaki K. Nanotechnology 18 (2007) 235603
24. Lyubinetsky I., Lea A., Thevuthasan S., and Baer D. Surf. Sci. 589 1-3 (2005) 120-128
25. Shiratani M., Koga K., Ando S., Inoue T., Watanabe Y., Nunomura S., and Kondo M. Surf. Coat. Technol. 201 (2007) 5468
26. Levchenko I., Rider A.E., and Ostrikov K. Appl. Phys. Lett. 90 (2007) 193110
27. Rider A.E., Levchenko I., and Ostrikov K. J. Appl. Phys. 101 (2007) 044306
28. Rider A.E., Ostrikov K., and Levchenko I. Nanotechnology 19 (2008) 355705
29. Rosei F., and Rosei R. Surf. Sci. 500 (2002) 395413
30. Rosei F. J. Phys.: Condens. Mater. 16 (2004) S1373
31. Zinke-Allmang M., and Feldman L.C. Appl. Surf. Sci. 33/34 (1988) 395
32. Knall J., Barnett S., Sundgren J.-E., and Greene J. Surf. Sci. 209 (1989) 314
33. Ott A., Casey S., and Leone S. Surf. Sci. 405 (1998) 228237
34. Jorke H. Surf. Sci. 193 (1988) 569
35. Ostrikov K., Levchenko I., and Xu S. Pure Appl. Chem. 80 (2008) 1909
36. National Physical Laboratory, Kaye and Laby: Tables of Physical and Chemical Constants: Web Edition (2008). Available from: .
37. Kersten H., Deutsch H., Steffen H., Kroesen G.M.W., and Hippler R. Vacuum 63 (2001) 385
38. Kittel C. Introduction to Solid State Physics. seventh ed. (1996), John Wiley and Sons Ltd.
39. Morimoto A., Asada K., Minamikawa T., Yonezawa Y., and Shimizu T. Thin Solid Films 395 (2001) 51-54
40. Musa G.S., Ehrich H., and Schuhmann J. IEEE Trans. Plasma Sci. 25 (1997) 386
41. Peng H., Zhou X., Wang N., Zheng Y.F., Liao L.S., Shi W.S., Lee C.S., and Lee S.T. Chem. Phys. Lett. 327 (2000) 263
42. Huang Z.P., Carnahan D.L., Rybczynshi J., Giersig M., and Sennett M. Appl. Phys. Lett. 82 (2003) 460
43. Manorama S., Chaudhari G.N., and Rao V.J. J. Phys. D: Appl. Phys. 26 (1993) 1793
44. Anders A. Surf. Coat. Technol. 200 (2005) 1893
45. Sugawara K., Sakuraba M., and Murota J. Semicond. Sci. Technol. 22 (2007) S42-S45
46. Teo K.B.K., Hash D.B., Lacerda R.G., Rupesinghe N.L., Bell M.S., Dalal S.H., Bose D., Govindan T.R., Cruden B.A., Chhowalla M., Amaratunga G.A.J., Meyyappan M., and Milne W.I. Nano. Lett. 4 (2004) 921
47. Helmersson U., Lattemann M., Bohlmark J., Ehiasarian A.P., and Gudmundsson J.T. Thin Solid Films 513 (2006) 124
48. Yeh F.B., and Wei P.S. Int. J. Heat Mass Trans. 47 (2004) 4019
49. Anders A., Pasaja N., Lim S.H., Petersen T.C., and Keast V.J. Surf. Coat. Technol. 201 (2007) 4628
50. Guan L., Zhang D., Lia Z., Tan X., Li L., Liu D., Fang R., Hu D., and Liu G. Physica B 387 (2007) 194202
51. Hash D.B., Bell M.S., Teo K.B.K., Cruden B.A., Milne W.I., and Meyyappan M. Nanotechnology 16 (2005) 925930
52. Rohde D., Pecher P., Kersten H., Jacob W., and Hippler R. Surf. Coat. Technol. 149 (2002) 206
53. Nishizawa J. J. Cryst. Growth 99 (1990) 1
54. Rudolph P. Cryst. Res. Technol. 38 (2003) 542-554
55. O'Reilly E.P., and Robertson J. Phys. Rev. B 34 (1986) 8684
56. Carroll J.A., and Spivak J.F. Solid-State Electron. 9 (1966) 383
57. Mori M., Nizawa Y., Nishi Y., Tambo T., and Tatsuyama C. Thin Solid Films 333 (1998) 60
58. Gargallo-Caballero R., Guzmán A., Miguel-Sánchez J., Hierro A., and Muñoz E. Mat. Sci. Eng. B 147 (2008) 118
59. Rider A.E., Levchenko I., Chan K.K.F., Tam E., and Ostrikov K. J. Nanopart. Res. 10 (2008) 249
60. Rider A.E., Levchenko I., Ostrikov K., and Keidar M. Plasma Process. Polym. 4 (2007) 638
61. Oliver R., Norenberg C., Martin M., Castell M., Allers L., and Briggs G. Surf. Sci. 532 (2003) 806-810
62. Schmidt O., Kiravittaya S., Nakamura Y., Heidemeyer H., Songmuang R., Muller C., Jin-Phillipp N., Eberl K., Wawra H., Christiansen S., Grabeldinger H., and Schweizer H. Surf. Sci. 514 (2002) 10-18
63. Ostrikov K., Yu M.Y., and Sugai H. J. Appl. Phys. 86 (1999) 2425
64. Xu S., Ostrikov K., Li Y., Tsakadze E.L., and Jones I.R. Phys. Plasmas 8 (2001) 2549
65. Ostrikov K. IEEE Trans. Plasma Sci. 35 (2007) 127
66. Hori M., and Goto T. Appl. Surf. Sci. 253 (2007) 6657
67. Xu S.Y., Long J.D., Sim L.N., Diong C.H., and Ostrikov K. Plasma Process. Polym. 2 (2005) 373
68. Hirata T., Amiya S., Akiya M., Takei O., Sakai T., Nakamura T., Kawamura-Tsuzuku J., Yamamoto T., and Hatakeyama R. Jpn. J. Appl. Phys. 47 (2008) 2068
69. Kaneko T., Takaya H., and Hatakeyama R. Thin Solid Films 516 (2008) 4374
70. Hatakeyama R., Kaneko T., Oohara W., Li Y.F., Kato T., Baba K., and Shishido J. Plasma Sources Sci. Technol. 17 (2008) 024009
71. Denysenko I.B., Xu S., Long J.D., Rutkevych P.P., Azarenkov N.A., and Ostrikov K. J. Appl. Phys. 95 (2004) 2713
72. Chen Z.Q., Cvelbar U., Mozetic M., He J.Q., and Sunkara M.K. Chem. Mater. 20 (2008) 3224
73. Sharma S., and Sunkara M.K. Nanotechnology 15 (2004) 130
74. Cvelbar U., and Mozetič M. J. Phys. D.: Appl. Phys. 40 (2007) 2300
75. Cvelbar U., Chen Z., Sunkara M.K., and Mozetič M. Small 4 (2008) 1610
76. Melechko A.V., Merkulov V.I., McKnight T.E., Guillorn M.A., Klein K.L., Lowndes D.H., and Simpson M.L. J. Appl. Phys. 97 (2005) 041301
77. Pi X.D., Gresback R., Liptak R.W., Campbell S.A., and Kortshagen U. Appl. Phys. Lett. 92 (2008) 123102
78. Gresback R., Holman Z., and Korsthagen U. Appl. Phys. Lett. 91 (2007) 093119
79. Chen Q., Xu M., Zhou H., Duan M., Zhu W., and He H. Physica B 403 (2008) 1666
80. Source: Webelements .