Surface fluxes of Si and C adatoms at initial growth stages of SiC quantum dots

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Rider, A E ^a   Levchenko, I ^a   Ostrikov, K ^a  

^a UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; COMPUTER SIMULATION; DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; SYNTHESIS (CHEMICAL);

NANODOT SYNTHESIS; QUANTUM DOT NUCLEI; SURFACE FLUXES; SURFACE TEMPERATURE;

SEMICONDUCTOR GROWTH;

EID: 33847681379     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433752     Document Type: Article

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