The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE

Materials Science and Engineering: B

Volumn 147, Issue 2-3, 2008, Pages 118-123

  Gargallo Caballero, R ^a   Guzmán, Á ^a   Miguel Sanchez J ^a   Hierro, A ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

InAsN; Molecular beam epitaxy; Nitrogen; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DIATOMIC NITROGEN; IONIZED SPECIES;

NITROGEN;

EID: 38749144404     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.09.087     Document Type: Article

References (8)

1. Ustinov V.M., Zhukov A.E., Egorov A.Yu., and Maleen N.A. Quantum Dots Lasers (2003), Oxford University Press, Oxford
2. Ledentsov N.N., Kovsh A.R., Zhukov A.E., Maleev N.A., Mikhrin S.S., Vasil'ev A.P., Semenova E.S., Maximov M.V., Shernyakov Yu.M., Kryzhanovskaya N.V., Ustinov V.M., and Bimberg D. Electron. Lett. 39 (2003) 1126
3. Liu H.Y., Sellers I.R., Badcock T.J., Mowbray D.J., Skolnick M.S., Groom K.M., Gutiérrez M., Hopkinson M., Ng J.S., David J.P.R., and Beanland R. Appl. Phys. Lett. 85 (2004) 704
4. Sopanen M., Xin H.P., and Tu C.W. Appl. Phys. Lett. 76 (2000) 994
5. Kita T., Masuda Y., Mori T., and Wada O. Appl. Phys. Lett. 83 (2003) 4152
6. Zhongzhe S., Fatt Yoon S., and Chuin Y.K. J. Crystal Growth 259 (2003) 40
7. J. Miguel-Sánchez, Crecimiento por MBE de pozos cuánticos de InGaAsN sobre GaAs (1 1 1)B y GaAs (1 0 0) para su aplicación en láseres de semiconductor, Doctoral Thesis, Universidad Politécnica de Madrid, 2005.
8. Pan Z., Li L.H., Zhang W., Lin Y.W., Wu R.H., and Ge W. Appl. Phys. Lett. 77 (2000) 1280