Single step method to deposit Si quantum dot films using H2 + SiH4 VHF discharges and electron mobility in a Si quantum dot solar cell

Surface and Coatings Technology

Volumn 201, Issue 9-11 SPEC. ISS., 2007, Pages 5468-5471

  Shiratani, Masaharu ^a   Koga, Kazunori ^a   Ando, Soichiro ^a   Inoue, Toshihisa ^a   Watanabe, Yukio ^a   Nunomura, Shota ^b   Kondo, Michio ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Mobility; Plasma CVD; Quantum dot; Si nano crystallite; Silane; Solar cell

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DISPERSIONS; ELECTRON MOBILITY; FILMS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON SOLAR CELLS; VOLUME FRACTION;

NANO-CRYSTALLITE; QUANTUM DOT FILMS;

SEMICONDUCTING SILICON;

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DISPERSIONS; ELECTRON MOBILITY; FILMS; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON SOLAR CELLS; VOLUME FRACTION;

EID: 33846469335     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.07.012     Document Type: Article

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