Quality improvement of III-nitride epilayers and their heterostructures grown on vicinal substrates by rf-MBE

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 404-409

  Shen, X Q ^a   Furuta, K ^b   Nakamura, N ^c   Matsuhata, H ^a   Shimizu, M ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

^c NIHON UNIVERSITY   (Japan)

Author keywords

A1. Crystal morphology; A3. Molecular beam epitaxy; B1. Nitride

Indexed keywords

CRYSTAL GROWTH; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMAS; QUALITY CONTROL; SUBSTRATES;

CRYSTAL MORPHOLOGY; ELECTRONIC DEVICE APPLICATIONS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; TWO DIMENSIONAL ELECTRON GAS (2DEG);

EPILAYERS;

EID: 33947415373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.104     Document Type: Article

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