Low temperature semiconductor surface passivation for nanoelectronic device applications

Surface Science

Volumn 532-535, Issue , 2003, Pages 759-763

  Bae, Choelhwyi ^a   Lucovsky, Gerald ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Auger electron spectroscopy; Interface states; Plasma processing; Semiconductor insulator interfaces

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; GALLIUM NITRIDE; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; NANOTECHNOLOGY; OXIDATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE;

SURFACE PASSIVATION;

SURFACE PROPERTIES;

EID: 0037846103     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00181-X     Document Type: Conference Paper

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