Molecular-beam epitaxy of InSb/GaSb quantum dots

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Deguffroy, N ^a   Tasco, V ^a,e   Baranov, A N ^a   Tourni E ^a   Satpati, B ^b   Trampert, A ^b   Dunaevskii, M S ^c   Titkov, A ^c   Ramonda, M ^d  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIV MONTPELLIER   (France)

^e INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DISLOCATIONS (CRYSTALS); ENTHALPY; MELTING POINT; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SEMICONDUCTING GALLIUM COMPOUNDS;

AMORPHOUS INSB LAYER; GASB MATERIALS; ISLANDS; PLASTIC RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547328143     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748872     Document Type: Article

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