Epitaxial growth of highly strained Si on relaxed Ge/Si(1 0 0) using ECR plasma CVD without substrate heating

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Sugawara, Katsutoshi ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; HEATING; LATTICE CONSTANTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRAIN RELAXATION; THERMODYNAMIC STABILITY;

STRAIN-FREE LATTICE CONSTANT; SUBSTRATE HEATING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 34247183087     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S10     Document Type: Article

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