Fabrication of self-assembled GaAs/AIGaAs quantum dots by low-temperature droplet epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7158-7160

  Lee, Chae Deok ^a   Park, Chanro ^b,f   Lee, Hwack Joo ^a   Lee, Kyu Seok ^c   Park, Seong Ju ^d   Park, Chan Gyung ^b   Noh, Sam Kyu ^a   Koguchi, Nobuyuki ^e  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Gwangju Institute of Science and Technology (GIST)   (South Korea)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f Hynix Semiconductor Inc   (South Korea)

Author keywords

Gallium; Gallium arsenide; Low temperature growth; Molecular beam epitaxy; Quantum dots

Indexed keywords

EID: 0001405339     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7158     Document Type: Article

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