Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 386-389

  Yasui, K ^a   Kikuchi, M ^a   Uwabachi, A ^a   Akahane, T ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; ELECTRON CYCLOTRON RESONANCE; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE;

AFTERGLOW PLASMA; CRYSTALLINITY; GALLIUM NITRIDE; PLASMA SPACE POTENTIAL;

EPITAXIAL GROWTH;

EID: 0032653191     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00717-X     Document Type: Article

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