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Thin Solid Films

Volumn 333, Issue 1-2, 1998, Pages 60-64

Growth temperature effect on the heteroepitaxy of InSb films on a Si(001) substrate covered with Ge islands

(5) Mori, M a Nizawa, Y a Nishi, Y a Tambo, T a Tatsuyama, C a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

Ge islands; Heteroepitaxy; InSb; Reflection high energy electron diffraction (RHEED); Si(001); X ray diffraction (XRD)

Indexed keywords

EPITAXIAL GROWTH; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXY;

THIN FILMS;

EID: 0032205651 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00805-0 Document Type: Article

Times cited : (8)

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