High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

Journal of Crystal Growth

Volumn 291, Issue 2, 2006, Pages 363-369

  Shusterman, S ^a,c   Paltiel, Y ^a   Sher, A ^a   Ezersky, V ^b   Rosenwaks, Y ^c  

^a Electro Optics Division   (Israel)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^c TEL AVIV UNIVERSITY   (Israel)

Author keywords

A1. Surface structure; A3. Droplet epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. InSb; B1. Nanomaterials

Indexed keywords

ANTIMONY; ARSENIC; COMPOSITION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SUBSTRATES; SURFACE STRUCTURE;

ANTIMONIDES; DROPLET EPITAXY; INSB; STRANSKI-KRASTANOV GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646949642     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.042     Document Type: Article

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