Intermixing and composition profiles of strained SiGe islands on Si(001)

Journal of Physics Condensed Matter

Volumn 20, Issue 45, 2008, Pages

  Rastelli, A ^a   Stoffel, M ^a,b   Merdzhanova, T ^b   Schmidt, O G ^a  

^a IFW DRESDEN   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; THREE DIMENSIONAL;

3D COMPOSITIONS; 3D PROFILES; ATOMIC FORCES; COMPOSITION GRADIENTS; COMPOSITION PROFILES; EXPERIMENTAL DETERMINATIONS; GE CONTENTS; NANOTOMOGRAPHY; SELECTIVE ETCHINGS; SELECTIVE WET CHEMICAL ETCHINGS; SI(001); SI(001) SUBSTRATE; SIGE ISLANDS;

WET ETCHING;

EID: 58149327155     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/45/454214     Document Type: Article

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