Lateral motion of SiGe islands driven by surface-mediated alloying

Physical Review Letters

Volumn 94, Issue 21, 2005, Pages

  Denker, U ^a,b   Rastelli, A ^a   Stoffel, M ^a   Tersoff, J ^c   Katsaros, G ^a   Costantini, G ^a   Kern, K ^a   Jin Phillipp, N Y ^d   Jesson, D E ^b   Schmidt, O G ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MONASH UNIVERSITY   (Australia)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

POSTGROWTH ANNEALING; SURFACE DIFFUSION; SURFACE-MEDIATED ALLOYING; WET CHEMICAL ETCHING;

ALLOYING; ANNEALING; DIFFUSION IN SOLIDS; ETCHING; GROWTH (MATERIALS); SURFACE PHENOMENA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 27744441979     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.216103     Document Type: Article

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