SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity

Semiconductor Science and Technology

Volumn 23, Issue 8, 2008, Pages 085021-

  Stoffel, M ^a,b   Malachias, A ^a   Merdzhanova, T ^a   Cavallo, F ^a,b   Isella, G ^c   Chrastina, D ^c   Von Kanel H ^c   Rastelli, A ^a,b   Schmidt, O G ^a,b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IFW DRESDEN   (Germany)

^c L NESS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESISTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

CHEMICAL ETCHANTS; EFFECT OF STRAIN; ETCHING RATES; LOW STRAINS; WET ETCHANTS;

STRAIN RATE;

EID: 51849088968     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/8/085021     Document Type: Article

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