Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Microelectronics Reliability

Volumn 49, Issue 1, 2009, Pages 26-31

  Rahman, M S ^a   Evangelou, E K ^a   Androulidakis, I I ^a   Dimoulas, A ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GERMANIUM; HAFNIUM COMPOUNDS; RARE EARTH ELEMENTS; RELIABILITY; STRESSES;

BI LAYERS; CONSTANT VOLTAGE STRESSES; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; GATE STACKS; HIGH STRESSES; IMPROVED RELIABILITIES; INTERFACIAL LAYERS; LOW STRESSES; MOS STRUCTURES; OXIDE CHARGES; STRESS CONDITIONS; TRAPPED CHARGES;

MOS DEVICES;

EID: 58149193295     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.10.005     Document Type: Article

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