Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 518-520

  Li, Z ^a,b   Schram, T ^a   Pantisano, L ^a   Stesmans, A ^c   Conard, T ^a   Shamuilia, S ^c   Afanasiev, V V ^c   Akheyar, A ^a   Van Elshocht, S ^a   Brunco, D P ^a   Deweerd, W ^a   Naoki, Y ^d   Lehnen, P ^a   De Gendt, S ^a,c   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d Intel assignee at IMEC ^*  (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); OXYGEN; RUTHENIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY;

DIELECTRIC INTERFACES; METAL GATES; WORK FUNCTION (WF);

MOS CAPACITORS;

EID: 34247149824     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.054     Document Type: Article

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