Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in Hf O2 Dy2 O3 gate stacks grown on Ge (100) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 439-442

  Rahman, M S ^a   Evangelou, E K ^a   Androulidakis, I I ^a   Dimoulas, A ^b   Mavrou, G ^b   Tsipas, P ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRIC CONDUCTIVITY; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; MOS DEVICES; MOSFET DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; STRESSES; SUBSTRATES;

APPLIED STRESS; CHARGE TRAPPING CHARACTERISTICS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONSTANT VOLTAGE STRESS; GATE STACKS; GE(100); INTERFACIAL LAYERS; INTERFACIAL QUALITIES; LOW STRESS; PROMISING MATERIALS; RELAXATION EFFECTS; SEMICONDUCTOR SUBSTRATES; STRESS-INDUCED LEAKAGE CURRENTS; TRAPPED CHARGES;

SEMICONDUCTING SILICON;

EID: 59949103573     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3025912     Document Type: Article

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