Low voltage stress induced leakage currents and surface states in ultrathin (1.2-2.5 nm) oxides

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2123-2132

  Meinertzhagen, A ^a   Petit, C ^a   Zander, D ^a   Simonetti, O ^a   Maurel, T ^a   Jourdain, M ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; CRITICAL VALUE; ELECTRICAL MEASUREMENT; ELECTRICAL STRESS; GATE CURRENT; INTERFACE STATE DENSITY; LOW VOLTAGES; METAL OXIDE SEMICONDUCTOR; OXIDE BREAKDOWN; OXIDE THICKNESS; ROOM TEMPERATURE; SURFACE STATE DENSITY; ULTRA-THIN; ULTRA-THIN OXIDE;

ELECTRON TUNNELING; INTERFACE STATES; LEAKAGE CURRENTS;

SURFACE STATES;

EID: 0037083837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430536     Document Type: Article

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