Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism

Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3407-3409

  Chou, Anthony I ^a   Lai, Kafai ^a,b   Kumar, Kiran ^a   Chowdhury, Prasenjit ^a,c   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b Rockwell Semiconductor Systems   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001431712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119186     Document Type: Article

References (10)

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