Electrical measurements of voltage stressed Al2O3/GaAs MOSFET

Microelectronics Reliability

Volumn 47, Issue 12, 2007, Pages 2082-2087

  Tang, Z ^a   Ye, P D ^b   Lee, D ^a   Wie, C R ^a  

^a State University of New York   (United States)

^b Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON TRAPS; GATE DIELECTRICS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

CONSTANT VOLTAGE STRESS (CVS); ELECTRICAL CHARACTERISTICS; MOBILE CHARGES; PERCOLATION MODELS;

MOSFET DEVICES;

EID: 35548979405     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.02.012     Document Type: Article

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