Time decay of stress induced leakage current in thin gate oxides by low-field electron injection

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1345-1353

  Cester, A ^a   Paccagnella, A ^a   Ghidini, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

THIN FILMS;

EID: 0035417323     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00264-1     Document Type: Article

References (23)

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