Charge trapping in high-k gate stacks due to the bilayer structure itself

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1858-1867

  Jameson, John R ^a   Griffin, Peter B ^a   Plummer, James D ^a   Nishi, Y ^a  

^a Stanford University   (United States)

Author keywords

Amorphous materials; Bilayer dielectrics; Charge trapping; Dielectric relaxation; High k dielectrics; Maxwell Wagner polarization; Threshold voltage instability; Transition metal oxides

Indexed keywords

AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; ELECTRIC FIELDS; ELECTRON TRAPS; EPITAXIAL GROWTH; POLARIZATION; THRESHOLD VOLTAGE; TRANSITION METALS;

BILAYER DIELECTRICS; CHARGE TRAPPING; HIGH-K DIELECTRICS; MAXWELL-WAGNER POLARIZATION; TRANSITION-METAL OXIDES;

GATES (TRANSISTOR);

EID: 33746642183     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.877700     Document Type: Article

References (39)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-k gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, 2001.
2. 2 gate dielectrics," in Proc. 41st Int. Reliab. Phys. Symp., 2003, pp. 41-45.
3. 2 dual layer gate dielectrics," IEEE Electron Device Lett., vol. 24, no. 2, pp. 87-89, Feb. 2003.
4. L. Pantisano, E. Cartier, A. Kerber, R. Degraeve, M. Lorenzini, M. Rosmeulen, G. Groeseneken, and H. E. Maes, "Dynamics of threshold voltage instability in stacked high-k dielectrics: Role of the interfacial oxide," in VLSI Symp. Tech. Dig., 2003, pp. 159-160.
5. S. Zalar, A. Callegari, E. Gusev, and M. V. Fischetti, "Charge trapping in high-k gate dielectric stacks," in IEDM Tech. Dig., 2002, pp. 517-520.
6. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, "Ultrathin high-k gate stacks for advanced CMOS devices," in IEDM Tech. Dig., 2001, pp. 451-454.
7. 2/high-k stacks," in Proc. 41st Int. Reliab. Phys. Symp., 2003, pp. 23-28.
8. 2 film," J. Appl. Phys., vol. 92, no. 7, pp. 3936-3940, Oct. 2002.
9. D. Frohman-Bentchkowsky and M. Lenzlinger, "Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures," J. Appl. Phys., vol. 40, no. 8, pp. 3307-3319, Jul. 1969.
10. H. Takeuchi, H. Y. Wong, D. Ha, and T.-J. King, "Impact of oxygen vacancies on high-k gate stack engineering," in IEDM Tech. Dig., 2004, pp. 829-832.
11. J. C. Maxwell, Electricity and Magnetism, vol. 1. Oxford, U.K.: Clarendon Press, 1892.
12. K. W. Wagner, Die Isolierstoffe der Elektrotechnik, H. Schering, Ed. Berlin, Germany: Springer-Verlag, 1924.
13. A. von Hippel, Dielectrics and Waves. New York: Wiley, 1954.
14. R. Waser and M. Klee, "Theory of conductivity and breakdown in perovskite thin films," in Sci. Technol. Integr. Ferroelectr. - Select. Papers From Eleven Years Proc. Int. Symp. on Integr. Ferroelect., C. P. de Araujo, O. Auciello, R. Ramesh, and G. W. Taylor, Eds., 2000, pp. 135-152.
15. H. Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, U. Schröder, H. Seidl, and D. Schumann, "A comparative study of dielectric relaxation losses in alternative dielectrics," in IEDM Tech. Dig., 2001, pp. 267-270.
16. H. Kliem, "Dielectric small-signal response by protons in amorphous insulators," IEEE Trans. Electr. Insul., vol. 24, no. 2, pp. 185-197, Apr. 1989.
17. Z. Xu, L. Pantisano, A. Kerber, R. Degraeve, E. Cartier, S. De Gendt, M. Heyns, and G. Groeseneken, "A study of relaxation current in high-k dielectric stacks," Trans. Electron Devices, vol. 51, no. 3, pp. 402-408, Mar. 2004.
18. J. R. Jameson, P. B. Griffin, A. Agah, J. D. Plummer, H.-S. Kim, D. V. Taylor, P. C. McIntyre, and W. A. Harrison, "Problems with metaloxide high-k dielectrics due to 1/t dielectric relaxation current in amorphous materials," in IEDM Tech. Dig., 2003, pp. 91-94.
19. 5 thin films," J. Appl. Phys., vol. 88, no. 2, pp. 850-862, Jul. 2000.
20. W. D. Westwood, N. Waterhouse, and P. S. Wilcox, Tantalum Thin Films. London, U.K.: Academic, 1975.
21. F. C. Aris and T. J. Lewis, "Steady and transient conduction processes in anodic tantalum oxide," J. Phys. D, Appl. Phys., vol. 6, no. 9, pp. 1067-1083, Jun. 1973.
22. 3 thin films from 1 mHz to 20 GHz," Appl. Phys. Lett., vol. 72, no. 4, pp. 498-500, Jan. 1998.
23. 3 thin films," in Proc. Int. Symp. Integr. Ferroelectr., 2001, pp. 893-902.
24. 3 thin films," Jpn. J. Appl. Phys., vol. 34, no. 9(B), pt. 1, pp. 5478-5482, Sep. 1995.
25. O. Auciello and R. Waser, Eds., Science and Technology of Electroceramic Thin Films. Dordrecht, The Netherlands: Kluwer, 1994.
26. M. Schumacher, G. W. Dietz, and R. Waser, Integr. Ferroelectr., vol. 10. New York: Taylor & Francis, 1995, p. 231.
27. 3 thin films," Jpn. J. Appl. Phys., vol. 33, no. 9(B), pt. 1, pp. 5255-5258, Sep. 1994.
28. S. M. Cho and D. Y. Jeon, "Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol-gel process," Thin Solid Films, vol. 338, no. 1/2, pp. 149-154, Jan. 1999.
29. 3 films prepared by two-step deposition of liquid source chemical vapor deposition," Jpn. J. Appl. Phys., vol. 34, no. 9(B), pt. 1, pp. 5077-5082, Sep. 1995.
30. 3 thin-film capacitors," Jpn. J. Appl. Phys., vol. 33, no. 9(B), pt. 1, pp. 5281-5286, Sep. 1994.
31. R. Höhler, J. Münzel, G. Kasper, and S. Hünklinger, "Dielectric long-time relaxation of amorphous materials at low temperatures," Phys. Rev. B, Condens. Matter, vol. 43, no. 11, pp. 9220-9227, Apr. 1991.
32. A. K. Jonscher, Dielectric Relaxation in Solids. London, U.K.: Chelsea Dielectrics Press, 1983.
33. P. M. J. Curie, "Recherches sur la conductibilite des corps cristallises," Annales de Chimie et de Physique, vol. 18, no. 6, pp. 203-269, 1889.
34. E. R. von Schweidler, "Studien über die Anomalien im Verhalten der Dielektrika," Ann. d. Physik (Leipzig), vol. 24, no. 4, pp. 711-770, 1907.
35. J. R. Jameson, W. Harrison, P. B. Griffin, and J. D. Plummer, "Double-well model of dielectric relaxation current," Appl. Phys. Lett., vol. 84, no. 18, pp. 3489-3491, May 2004.
36. J. R. Jameson, W. Harrison, P. B. Griffin, and J. D. Plummer, "Theory of nonidealities in the dielectric relaxation current of glasses," J. Appl. Phys. submitted for publication.
37. D. J. Griffiths, Introduction to Electrodynamics, 2nd ed. Englewoods Cliff, NJ: Prentice-Hall, 1989.
38. 2 nanolaminate structures grown by atomic layer deposition," J. Mater. Res., vol. 19, no. 2, pp. 643-650, 2004.
39. H. S. Kim, "Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties," Ph.D. dissertation, Dept. Mater. Sci. Eng., Stanford Univ., Stanford, CA, 2004.