Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3 nm) oxides

Microelectronics Reliability

Volumn 47, Issue 2-3, 2007, Pages 401-408

  Petit, C ^a   Zander, D ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; THERMAL EFFECTS;

ELECTRICAL STRESSES; LOW VOLTAGE STRESS; OXIDE THICKNESS; ULTRATHIN OXIDES;

LEAKAGE CURRENTS;

EID: 33846642656     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.05.006     Document Type: Article

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