Simplified quantitative stress-induced leakage current (SILC) model for MOS devices

Microelectronics Reliability

Volumn 46, Issue 2-4, 2006, Pages 287-292

  Ossaimee, M ^a   Kirah, K ^a   Fikry, W ^a   Girgis, A ^a   Omar, O A ^a  

^a Ain Shams University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLYTIC ANALYSIS; MOS DEVICES; NUMERICAL METHODS;

INELASTIC TRAP-ASSISTED TUNNELING (ITAT); OXIDE THICKNESS; STRESS-INDUCED LEAKAGE CURRENT (SILC);

MOS CAPACITORS;

EID: 30844441197     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.007     Document Type: Article

References (10)

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