Conduction mechanism and origin of stress-induced leakage current in thin silicon dioxide films

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6360-6369

  Kimura, Mikihiro ^a,b   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR STRUCTURE; SILICA; SILICON WAFERS; THICKNESS MEASUREMENT;

ELECTRICAL STRESS; ELECTRON TRAP; FILM THICKNESS; INTERFACE STATE GENERATION; OXIDE TRAP CHARGE BUILDUP; STRESS INDUCED LEAKAGE CURRENT;

THIN FILMS;

EID: 0030398548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363655     Document Type: Article

References (33)

1. A. Brand, K. Wu, S. Pan, and D. Chin, Proceedings of International Reliability Physics Symposium, 127 (1993).
2. K. Naruke, S. Taguchi, and M. Wada, IEDM Tech. Dig. 424 (1988).
3. D. A. Baglee and M. C. Smayling, IEDM Tech. Dig. 624 (1985).
4. J. Maserjian and N. Zamani, J. Vac. Sci. Technol. 20, 743 (1982).
5. P. Olivo, T. N. Ngyuyen, and B. Riccó, IEEE Trans. Electron Devices 35, 2259 (1988).
6. P. Olivo, B. Riccó, and E. Sangiorgi, Appl. Phys. Lett. 48, 1135 (1986).
7. R. Rofan and C. Hu, IEEE Electron Device Lett. 12, 632 (1991).
8. R. Moazzami and C. Hu, IEDM Tech. Dig. 139 (1992).
9. D. J. Dumin and J. R. Maddux, IEEE Trans. Electron Devices 40, 986 (1993).
10. N. Yasuda, N. Patel, and A. Toriumi, Extended Abstracts of International Conference on Solid State Devices and Materials, 847 (1993).
11. M. R. Hermann and A. Schenk, J. Appl. Phys. 77, 4522 (1995).
12. D. J. DiMaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995).
13. M. Kimura and H. Koyama, Proceedings of International Reliability Physics Symposium, 167 (1994).
14. M. Kimura, Reliability of Metals in Electronics, edited by H. S. Rathore, Electrochem. Soc., Proc. 95-3, 1 (1995).
15. M. Kimura and T. Ohmi, Jpn. J. Appl. Phys. 35, 1478 (1996).
16. C. T. Sah, IEEE Trans. Nucl. Sci. NS-23, 1563 (1976).
17. A. G. Revesz, IEEE Trans. Nucl. Sci. NS-24, 2102 (1977).
18. D. L. Griscom, J. Appl. Phys. 58, 2524 (1985).
19. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
20. D. A. Buchanan, A. D. Marwick, D. J. DiMaria, and L. Don, J. Appl. Phys. 76, 3595 (1994).
21. A. El-Hdiy, J. Appl. Phys. 75, 1592 (1994).
22. M. Kimura, J. Appl. Phys. 73, 4388 (1993).
23. M. Kimura, J. Mitsuhashi, and H. Koyama, J. Appl. Phys. 77, 1569 (1995).
24. T. H. Ning and H. N. Yu, J. Appl. Phys. 45, 5373 (1974).
25. T. H. Ning, C. M. Osburn, and H. N. Yu, Appl. Phys. Lett. 26, 248 (1975).
26. T. H. Ning, J. Appl. Phys. 47, 1079 (1976).
27. T. H. Ning, J. Appl. Phys. 47, 3207 (1976).
28. D. J. DiMaria, J. Appl. Phys. 47, 4073 (1976).
29. N. K. Patel and A. Toriumi, Appl. Phys. Lett. 64, 1809 (1994).
30. M. Depas, B. Vermeire, P. W. Mertens, R. L. Van Meirhaeghe, and M. M. Heyns, Solid-State Electron. 38, 1465 (1995).
31. H. Satake, N. Yasuda, and A. Toriumi, Extended Abstracts of International Conference on Solid State Devices and Materials, 264 (1995).
32. E. Hasegawa, A. Ishitani, K. Akimoto, M. Tsukiji, and N. Ohta, J. Electrochem. Soc. 142, 273 (1995).
33. G. Lucovsky, M. J. Manitani, J. K. Srivastava, and E. A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987).